袁建宇教授课题组在adv. mater.上发表论文-k8凯发赢家一触即发

作者：

du li¹, chenyu zhao¹, xuliang zhang¹, xinyu zhao¹, hehe huang¹, huifeng li¹, fangchao li^1,2, and jianyu yuan¹*

单位：

¹institute of functional nano & soft materials (funsom), jiangsu key laboratory of advanced negative carbon technologies, soochow university, 199 ren-ai road, suzhou industrial park, suzhou, jiangsu, 215123 p. r. china  

²jiangsu key laboratory of micro and nano heat fluid flow technology and energy application, school of physical science and technology, suzhou university of science and technology, suzhou, jiangsu, china.

摘要：

formamidinium lead triiodide (fapbi₃) perovskite quantum dot (pqd) are promising candidate for high-performing quantum dot photovoltaic due to its narrow bandgap, high ambient stability, and long carrier lifetime. however, the carrier transport blockage and nonradiative recombination loss, originating from the high-dielectric ligands and defects/trap states on the fapbi₃ pqd surface, significantly limit the efficiency and stability of its photovoltaic performance. in this work, through exploring dual-site molecular ligands, namely 2-thiophenemethylammonium iodide (2-tm) and 2-thiopheneethylammonium iodide (2-te), a dual-phase synergistic ligand exchange (dsle) protocol consisting of both solution-phase and solid-state ligand engineering is demonstrated. the dsle strategy effectively replaces the native long insulating ligands and simultaneously passivate surface defects in hybrid fapbi₃ pqds, leading to enhanced electronic coupling for efficient charge transport. consequently, the fapbi3 pqd solar cell based on dsle strategy achieves a notable enhanced efficiency from 15.43% to 17.79% (2-tm) and 18.21% (2-te), respectively. besides, both 2-tm and 2-te engineered devices exhibit enhanced stability, maintaining over 80% of its initial efficiency after aging in ambient environment (20–30% humidity, 25 °c) for over 1400 h. it believes these findings will provide a new protocol to precisely regulate the surface chemistry of hybrid pqds toward high-performance optoelectronic applications.

影响因子：

27.4

分区情况：

一区

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